Report on the growth of bulk aluminum nitride and subsequent substrate preparation-Reference-Cited by-同舟云学术

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Report on the growth of bulk aluminum nitride and subsequent substrate preparation

Published:2001-10 Issue:3 Volume:231 Page:317-321
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Carlos Rojo J.,Slack Glen A.,Morgan Kenneth,Raghothamachar Balaji,Dudley Michael,Schowalter Leo J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Nonmetallic crystals with high thermal conductivity

2. Thermal expansion of some diamondlike crystals

3. Thermal expansion of bulk and homoepitaxial GaN

4. G.A. Slack, Personal Communication, 1998.

5. Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method

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1. Growth of bulk AlN crystals;Reference Module in Materials Science and Materials Engineering;2023

2. Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength;Journal of Materials Research;2021-12-14

3. Binding Mechanisms Between Laser-Welded Polyamide-6.6 and Native Aluminum Oxide;ACS Omega;2021-12-03

4. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density;Applied Physics Express;2021-03-18

5. Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method;Journal of the Korean Physical Society;2020-08

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