Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction-Reference-Cited by-同舟云学术

Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction

Published:1985-12-15 Issue:12 Volume:32 Page:8126-8135
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Harrang J. P.,Higgins R. J.,Goodall R. K.,Jay P. R.,Laviron M.,Delescluse P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.8126/fulltext

Reference22 articles.

1. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

2. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering Spectra

3. Self-consistent variational calculations and alloy scattering in semiconductor heterojunctions

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