Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million

Author:

Kong Zhenzhen12ORCID,Li Zonghu3,Cao Gang345ORCID,Su Jiale1,Zhang Yiwen12,Liu Jinbiao12,Liu Jingxiong12,Ren Yuhui12,Li Huihui6ORCID,Wei Laiming7,Guo Guo-ping345ORCID,Wu Yuanyuan8,Radamson Henry H.8,Li Junfeng1,Wu Zhenhua12ORCID,Li Hai-ou345ORCID,Yang Jiecheng3,Zhao Chao6,Ye Tianchun12,Wang Guilei146

Affiliation:

1. Integrated Circuit Advanced Process R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China

2. School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, P. R. China

3. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, P. R. China

4. Hefei National Laboratory, Hefei 230088, P. R. China

5. Origin Quantum Computing Company Limited, Hefei 230026, P. R. China

6. Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China

7. School of Advanced Manufacturing Engineering, Hefei University, Hefei 230601, P. R. China

8. Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, P. R. China

Funder

National Key Research and Development Program of China

Youth Innovation Promotion Association

National Natural Science Foundation of China

Innovation Program for Quantum Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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