Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions-Reference-Cited by-同舟云学术

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Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

Published:2017-11-23 Issue:3 Volume:28 Page:1704665
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Guan Xinwei¹,Hu Weijin¹,Haque Md Azimul¹,Wei Nini²,Liu Zhixiong¹,Chen Aitian¹,Wu Tom¹^ORCID

Affiliation:

1. Physical Sciences and Engineering Division; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Kingdom of Saudi Arabia

2. Imaging and Characterization Core Lab; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Kingdom of Saudi Arabia

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference69 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Emerging memories: resistive switching mechanisms and current status

3. Resistive switching phenomena in thin films: Materials, devices, and applications

4. Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

5. Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

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