Recent Progress in Two-Terminal Memristors Utilizing Halide Perovskites and Their Potential Applications

Abstract

Halide perovskites (HP) have garnered significant attention as highly prospective electronic materials for the development of advanced electronic devices, such as resistive random-access memory (RRAM) devices, artificial synapses, and logic operation. This review begins by providing a concise overview of the structural and optoelectronic properties of HP-based materials. Subsequently, it delves into the discussion of HP-based memristors, focusing on their remarkable switching characteristics and potential transport mechanisms. Furthermore, this review contains the recent advancements in the HP-based two-terminal memristors across four application domains: memory, logic gate, unclonable physical device, and neuromorphic computing devices. Lastly, the main challenges encountered in the implementing HP-based memristors are briefly discussed. This review provides an insightful guide for the HP-based memristor to keep pace with the forthcoming era of big data and artificial intelligence.