CsBr Immersion for Organic–Inorganic Hybrid Perovskite-Based Memristors: Controllable Grain, Poole–Frenkel Emission, and Electrical Properties-Reference-Cited by-同舟云学术

CsBr Immersion for Organic–Inorganic Hybrid Perovskite-Based Memristors: Controllable Grain, Poole–Frenkel Emission, and Electrical Properties

Published:2023-10-17 Issue:11 Volume:5 Page:5916-5927
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chen Yen-Shuo¹,Lin Ching Chang²^ORCID,Lin Chih Wei¹,Tsai Shang Yu¹,Ko Fu-Hsiang¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan

2. Department of General Systems Studies, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan

Funder

National Science and Technology Council

Ministry of Education, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00913

Reference54 articles.

1. Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–xClx Perovskite for RRAM Application

2. Impact of chemical doping on resistive switching behavior in zirconium-doped CH3NH3PbI3 based RRAM

3. Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden–Popper Perovskites for Non-volatile Memories

4. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

5. Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

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