Impact of chemical doping on resistive switching behavior in zirconium-doped CH3NH3PbI3 based RRAM-Reference-Cited by-同舟云学术

Impact of chemical doping on resistive switching behavior in zirconium-doped CH3NH3PbI3 based RRAM

Published:2019-05 Issue: Volume:68 Page:230-235
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

He Yuli,Ma Guokun,Zhou Xiaowen,Cai Hengmei,Liu Chunlei,Zhang Jun,Wang Hao^ORCID

Funder

National key R&D Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference34 articles.

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4. Improvement of resistive switching characteristic in silicon oxide-based RRAM through hydride- oxidation on indium tin oxide electrode by supercritical CO2 fluid;Chang;IEEE Electron. Device Lett.,2015

5. Resistive switching mechanism of oxygen-rich indium tin oxide resistance random access memory;Tsai;IEEE Electron. Device Lett.,2016

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