Conversion between digital and analog resistive switching behaviors and logic display application of photoresponsive ZnO nanorods-based memristor-Reference-Cited by-同舟云学术

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Conversion between digital and analog resistive switching behaviors and logic display application of photoresponsive ZnO nanorods-based memristor

Published:2024-06 Issue: Volume:39 Page:109159
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Rao Zhaowei,Sun Bai,Zhou Guangdong,Mao Shuangsuo,Qin Jiajia,Yang Yusheng,Liu Mingnan,Lin Wei,Yang Yulong,Zhao Yong

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Fujian Normal University

Xi’an Jiaotong University

Publisher

Elsevier BV

Reference70 articles.

1. Uncertainty quantification via a memristor Bayesian deep neural network for risk-sensitive reinforcement learning;Lin;Nat. Mach. Intell.,2023

2. Accurate and energy-efficient bit-slicing for RRAM-based neural networks;Diware;IEEE Trans. Emerg. Top. Comput. Intell.,2023

3. Effect of Ni-doped on switching mechanisms and characteristics of ZnO-based memristor: Experimental and first-principles investigations;Wang;Appl. Surf. Sci.,2024

4. Breaking the von Neumann bottleneck: architecture-level processing-in-memory technology;Zou;Sci. China Inf. Sci.,2021

5. Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability;Bera;Appl. Phys. Lett.,2022

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