Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep27451.pdf
Reference16 articles.
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3. Kügeler, C., Meier, M., Rosezin, R., Gilles, S. & Waser, R. High density 3D memory architecture based on the resistive switching effect. Solid-State Electron. 53, 1287–1292 (2009).
4. Jung, R. et al. Decrease in switching voltage fluctuation of Pt/NiOx/Pt structure by process control. Appl. Phys. Lett. 91, 22112–22112 (2007).
5. Yoo, I. et al. Fractal dimension of conducting paths in nickel Oxide (NiO) thin films during resistance switching. IEEE Trans. Nanotechnol. 9, 131–133 (2010).
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