Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201204097/fullpdf
Reference26 articles.
1. International Technology Roadmap for Semiconductors 2011 www.itrs.net
2. Sub-nanosecond switching of a tantalum oxide memristor
3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
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