Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Published:2014-07-20 Issue:7-8-9 Volume:20 Page:189-208
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Blanquart Timothee¹,Niinistö Jaakko¹,Ritala Mikko¹,Leskelä Markku¹

Affiliation:

1. Laboratory of Inorganic Chemistry; University of Helsinki; P.O. Box 55 (A.I.Virtasen aukio 1) FI-00014 Helsinki (Finland)

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.201400055/fullpdf

Reference145 articles.

1. Atomic Layer Deposition of High-kOxides of the Group 4 Metals for Memory Applications

2. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

3. Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

4. TiO2 Thin Films Prepared via Adsorptive Self-Assembly for Self-Cleaning Applications

5. Atomic layer deposited (ALD) TiO2 and TiO2−x-Nx thin film photocatalysts in salicylic acid decomposition

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