Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology-Reference-Cited by-同舟云学术

Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology

Published:2009-10-13 Issue:48 Volume:21 Page:4970-4974
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chang Wen Hsin,Lee Chih Hsun,Chang Yao Chung,Chang Pen,Huang Mao Lin,Lee Yi Jun,Hsu Chia-Hung,Hong J. Minghuang,Tsai Chiung Chi,Kwo J. Raynien,Hong Minghwei

Funder

National Science Council, Taiwan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.200902101/fullpdf

Reference31 articles.

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4. GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

5. Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

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