Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON/I OFF Operating at 473 K-Reference-Cited by-同舟云学术

Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON/I OFF Operating at 473 K

Published:2021-06 Issue:6 Volume:68 Page:2653-2660
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sarkar Ritam,Upadhyay Bhanu B.,Bhunia Swagata,Pokharia Ravindra S.,Nag Dhiman,Surapaneni S.,Lemettinen Jori^ORCID,Suihkonen Sami^ORCID,Gribisch Philipp^ORCID,Osten Hans-Jorg^ORCID,Ganguly Swaroop,Saha Dipankar^ORCID,Laha Apurba^ORCID

Funder

Department of Science and Technology (DST), Government of India

German Academic Exchange Service

Ministry of Electronics and Information Technology, Government of India

Minna-James-Heineman Foundation for a Scholarship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9439211/09411704.pdf?arnumber=9411704

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1. A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications;Journal of Electronic Materials;2024-06-04

2. Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd₂O₃/AlGaN/GaN MOSHEMT;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors;Journal of Applied Physics;2023-12-28

4. Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation;Applied Physics Letters;2023-03-13

5. High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates;IEEE Journal of the Electron Devices Society;2023