High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, Urbana, IL, USA
Funder
Defense Advanced Research Projects Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10061582.pdf?arnumber=10061582
Reference21 articles.
1. Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier
2. Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes
3. Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON/I OFF Operating at 473 K
4. Performance and V TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiN x /PECVD-SiN x Gate Dielectric Stack
5. Temperature-dependent strain relaxation of the AlGaN barrier in AlGaN∕GaN heterostructures with and without Si3N4 surface passivation
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1. Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications;IEEE Transactions on Device and Materials Reliability;2024-09
2. Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate;Journal of Electronic Materials;2024-07-13
3. Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics;Journal of Electronic Materials;2024-03-20
4. Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates;Semiconductor Science and Technology;2023-12-27
5. Temperature dependent characteristics of β -Ga2O3 FinFETs by MacEtch;Applied Physics Letters;2023-07-24
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