Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications-Reference-Cited by-同舟云学术

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Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications

Published:2024-09 Issue:3 Volume:24 Page:428-436
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Rathaur Shivendra K.¹^ORCID,Ma Cheng-Jun²,Dixit Abhisek¹^ORCID,Lee Ching-Ting³^ORCID,Chang Edward Yi⁴^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India

2. International College of Semiconductor, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. Department of Electrical Engineering, Yuan Ze University, Taoyuan, Taiwan

4. Department of Materials Science and Engineering, International College of Semiconductor Technology, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7298/10667659/10599527.pdf?arnumber=10599527

Reference30 articles.

1. Positive and negative threshold voltage instabilities in GaN-based transistors

2. Deep traps in GaN-based structures as affecting the performance of GaN devices

3. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

4. Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ – $V$ Characteristic for Switching Applications

5. InAlN/GaN HEMTs: a first insight into technological optimization

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