Funder
National Research Foundation of Korea through the Ministry of Education, Science and Technology
Samsung Electronics Company, Ltd.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
33 articles.
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1. Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications;IEEE Transactions on Device and Materials Reliability;2024-09
2. Effect of temperature dependence of 2DEG on device characteristics of field‐plated recessed‐gate III‐nitride/β‐Ga2O3 nano‐HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
3. Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructure;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. Dependence of Device Performances on Fin Ratios of AlGaN/GaN Nanoscale Fin-HEMTs;ECS Journal of Solid State Science and Technology;2023-09-01
5. Study on High-Linearity Devices Based on Double-Channel AlGaN/GaN FinFET Structure;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07