GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
2. Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN
3. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
4. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
5. Direct evidence of tensile strain in wurtzite structuren−GaNlayers grown onn−Si(111)using AlN buffer layers
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1. Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite;Nanomaterials;2020-08-02
2. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures;Scientific Reports;2015-11-13
3. Novel Oxide Buffer for Scalable GaN-on-Silicon;ECS Transactions;2014-08-08
4. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-07
5. Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03
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