Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1784046
Reference17 articles.
1. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
2. High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio
3. Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
4. Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)
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