High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1478157
Reference7 articles.
1. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
4. AlGaInN high-power lasers grown on an ELO-GaN layer
5. GaN-Based High Power Blue-Violet Laser Diodes
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