Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates-Reference-Cited by-同舟云学术

Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates

Published:2019-02-01 Issue:2 Volume:19 Page:892-896
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Lee Seung-Jae¹,Jeon Seong-Ran¹,Ju Jin-Woo¹,Baek Jong Hyeob¹,Su Jie²,Lee Soo Min²,Lee Dong S³,Lee Cheul-Ro⁴

Affiliation:

1. Korea Photonics Technology Institute, Gwangju 61007, Republic of Korea

2. Veeco Instruments Inc., Somerset, NJ 08873, USA

3. QMAT, Inc., Santa Clara, CA 95051, USA

4. School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeollabuk-do 54896, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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1. Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer;Journal of Luminescence;2023-11

2. Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si;Chinese Physics B;2023-01-01

3. The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si;AIP Advances;2022-09-01

4. Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate;Journal of Electronic Materials;2022-04-07

5. Effects of the pretreatment of Si substrate before the pre-deposition of Al on GaN-on-Si;Superlattices and Microstructures;2021-11