AlGaInN high-power lasers grown on an ELO-GaN layer-Reference-Cited by-同舟云学术

AlGaInN high-power lasers grown on an ELO-GaN layer

Published:2000-12 Issue:1-4 Volume:221 Page:646-651
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Takeya Motonobu,Yanashima Katsunori,Asano Takeharu,Hino Tomonori,Ikeda Shinro,Shibuya Katsuyoshi,Kijima Satoru,Tojyo Tsuyoshi,Ansai Shinichi,Uchida Shiro,Yabuki Yoshifumi,Aoki Tsuneyoshi,Asatsuma Tsunenori,Ozawa Masafumi,Kobayashi Toshimasa,Morita Etsuo,Ikeda Masao

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

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2. O.H. Nam, M.D. Bremser, T. Zheleva, R.F. Davis, Presented at 39th Elecronic Material Conference, D-5, June 25–27, Colorado State University, 1997.

3. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

4. Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

5. T.S. Zheleva, D. Thomson, S. Smith, P. Rajagopal, K. Linthicum, T. Gehrke, R.F. Davis, Ext. Abstr. G3.38, MRS Fall Meet, Boston, 1998.

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