Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates-Reference-Cited by-同舟云学术

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Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Published:2001-10 Issue:3 Volume:231 Page:335-341
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Davis Robert F.,Gehrke Thomas,Linthicum Kevin J.,Preble Edward,Rajagopal Pradeep,Ronning Carsten,Zorman Christian,Mehregany Mehran

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. The deposition of group III nitrides on silicon substrates

2. Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

3. Growth of GaN by ECR-assisted MBE

4. Izumi, H. Matsumura, Appl. Phys. Lett. 71 (1997) 1371.

5. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

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4. Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface;Thin Solid Films;2018-09

5. Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates;physica status solidi (a);2017-02-24

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