Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga <sub>2</sub> O <sub>3</sub> Epitaxy and its Impact on the In‐Plane Electronic Conduction-Reference-Cited by-同舟云学术

Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga ₂ O ₃ Epitaxy and its Impact on the In‐Plane Electronic Conduction

Published:2022-11-07 Issue:2 Volume:33 Page:2207821
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Mazzolini Piero¹²^ORCID,Fogarassy Zsolt³^ORCID,Parisini Antonella¹^ORCID,Mezzadri Francesco²⁴^ORCID,Diercks David⁵^ORCID,Bosi Matteo²^ORCID,Seravalli Luca²^ORCID,Sacchi Anna¹^ORCID,Spaggiari Giulia¹²^ORCID,Bersani Danilo¹^ORCID,Bierwagen Oliver⁶^ORCID,Janzen Benjamin Moritz⁷^ORCID,Marggraf Marcella Naomi⁷^ORCID,Wagner Markus R.⁶⁷^ORCID,Cora Ildiko³^ORCID,Pécz Béla³^ORCID,Tahraoui Abbes⁶^ORCID,Bosio Alessio¹^ORCID,Borelli Carmine¹^ORCID,Leone Stefano⁸^ORCID,Fornari Roberto¹²^ORCID

Affiliation:

1. Department of Mathematical Physical and Computer Sciences University of Parma Parco Area delle Scienze 7/A 43124 Parma Italy

2. IMEM‐CNR Parco Area delle Scienze 37/A 43124 Parma Italy

3. Centre for Energy Research Hungarian Academy of Sciences Institute for Technical Physics and Materials Science P.O. Box 49 H‐1525 Budapest Hungary

4. Department of Chemistry Life Sciences and Environmental Sustainability University of Parma Parco Area delle Scienze 17/A 43124 Parma Italy

5. Shared Instrumentation Facility Colorado School of Mines Golden Golden CO 80401 USA

6. Paul‐Drude‐Institut für Festkörperelektronik Leibniz‐Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5–7 10117 Berlin Germany

7. Institute of Solid State Physics Technische Universität Berlin Hardenbergstr. 36 10623 Berlin Germany

8. Fraunhofer IAF Fraunhofer Institute for Applied Solid State Physics 79108 Freiburg im Breisgau Germany

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202207821

Reference65 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. A review of Ga2O3materials, processing, and devices

3. Polymorphism of Ga2O3 and the System Ga2O3—H2O

4. SnO/β-Ga2O3 vertical pn heterojunction diodes

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