Orthorhombic undoped κ-Ga<sub>2</sub>O<sub>3</sub> epitaxial thin films for sensitive, fast, and stable direct X-ray detectors-Reference-Cited by-同舟云学术

Orthorhombic undoped κ-Ga₂O₃ epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

Published:2023 Issue:11 Volume:11 Page:3759-3769
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Girolami Marco¹^ORCID,Bosi Matteo²^ORCID,Serpente Valerio¹,Mastellone Matteo¹^ORCID,Seravalli Luca²^ORCID,Pettinato Sara³,Salvatori Stefano³,Trucchi Daniele M.¹^ORCID,Fornari Roberto⁴²^ORCID

Affiliation:

1. Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM – CNR), Sede Secondaria di Montelibretti, Strada Provinciale 35D, 9, 00010 Montelibretti, Roma, Italy

2. Istituto dei Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM – CNR), Parco Area delle Scienze 37/A, 43124, Parma, Italy

3. Faculty of Engineering, Università degli Studi Niccolò Cusano, Via Don Carlo Gnocchi 3, 00166 Roma, Italy

4. Department of Mathematical, Physical and Computer Sciences, Università di Parma, Parco Area delle Scienze 7/A, 43124 Parma, Italy

Abstract

X-ray photoresponse of κ-Ga2O3 is investigated for the first time. Results show that κ-Ga2O3 is a versatile material for the development of high-performance direct X-ray detectors.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC05297K

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