SnO/β-Ga2O3 vertical pn heterojunction diodes-Reference-Cited by-同舟云学术

SnO/β-Ga2O3 vertical pn heterojunction diodes

Published:2020-12-21 Issue:25 Volume:117 Page:252106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Budde Melanie¹^ORCID,Splith Daniel²^ORCID,Mazzolini Piero¹^ORCID,Tahraoui Abbes¹,Feldl Johannes¹^ORCID,Ramsteiner Manfred¹^ORCID,von Wenckstern Holger²^ORCID,Grundmann Marius²^ORCID,Bierwagen Oliver¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

2. Felix-Bloch-Institut für Festkörperphysik, Halbleiterphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany

Funder

Leibniz Gemeinschaft

European Social Fundand Hellenic Resources

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0031442

Reference49 articles.

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2. A review of Ga2O3materials, processing, and devices

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4. On the bulk β-Ga2O3 single crystals grown by the Czochralski method

5. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

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