X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire-Reference-Cited by-同舟云学术

X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire

Published:2009-06-22 Issue:8 Volume:206 Page:1757-1760
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Kyutt R. N.,Shcheglov M. P.,Ratnikov V. V.,Kalmykov A. E.

Funder

Russian Foundation for Basic Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200881611/fullpdf

Reference17 articles.

1. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates

2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

3. Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

4. Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

5. Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire

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1. Joint effect of miscut r-plane sapphire substrate and different nucleation layers on structural characteristics of non-polar a-plane GaN films;CrystEngComm;2023

2. Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates;CrystEngComm;2019

3. Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate;CrystEngComm;2019

4. Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate;Applied Physics Express;2018-11-26

5. Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates;CrystEngComm;2018