Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates-Reference-Cited by-同舟云学术

Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates

Published:2019 Issue:17 Volume:21 Page:2747-2753
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Caiwei¹²³⁴⁵^ORCID,Jiang Yang¹²³⁴⁵,Die Junhui¹²³⁴⁵,Yan Shen¹²³⁴⁵,Hu Xiaotao¹²³⁴⁵,Hu Wei¹²³⁴⁵,Ma Ziguang¹²³⁴⁵,Deng Zhen¹²³⁴⁵,Jia Haiqiang¹²³⁴⁵,Chen Hong¹²³⁴⁵

Affiliation:

1. Key Laboratory for Renewable Energy

2. Beijing Key Laboratory for New Energy Materials and Devices

3. Beijing National Laboratory for Condensed Matter Physics

4. Institute of Physics, Chinese Academy of Sciences

5. Beijing 100190

Abstract

The characteristics of a-plane GaN films directly grown on silicon dioxide (SiO₂) hole-array patterned r-sapphire substrates (HPSS) were investigated in this work.

Funder

National Natural Science Foundation of China

Beijing Municipal Science and Technology Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01988F

Reference36 articles.

1. Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

2. In situ monitoring and Hall measurements of GaN grown with GaN buffer layers