Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1−xGaxN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120269
Reference18 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
3. Solid phase immiscibility in GaInN
4. Strain effects on the interface properties of nitride semiconductors
5. Excitonic nonlinearities in wide gap II–VI multiple quantum wells
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