Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/12/i=1/a=015503/pdf
Reference30 articles.
1. MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate
2. Evaluation of growth methods for the heteroepitaxy of non-polar(112¯0)GAN on sapphire by MOVPE
3. Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN
4. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy
5. High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
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1. Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film;Journal of Vacuum Science & Technology A;2023-08-10
2. Enhanced Performance of the Non-Polar Ultraviolet Light-Emitting Diodes with Lattice-Matched Quaternary Quantum Barriers;Key Engineering Materials;2022-01-21
3. Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors;Applied Physics Letters;2021-02-01
4. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer*;Chinese Physics Letters;2020-03-01
5. Improved crystal quality of nonpolar a-plane GaN based on the nano pattern formed by the annealed thin Ni layer;Superlattices and Microstructures;2019-06
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