MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
3. Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy
4. Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
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1. Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review;Coatings;2022-02-18
2. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN;Scientific Reports;2021-05-06
3. Growth of thin AlN nucleation layer and its impact on GaN-on-SiC heteroepitaxy;Journal of Alloys and Compounds;2020-10
4. Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN;Materials Science in Semiconductor Processing;2020-01
5. Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate;Applied Physics Express;2018-11-26
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