Enhanced Performance of the Non-Polar Ultraviolet Light-Emitting Diodes with Lattice-Matched Quaternary Quantum Barriers
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Published:2022-01-21
Issue:
Volume:907
Page:3-9
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ISSN:1662-9795
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Container-title:Key Engineering Materials
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language:
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Short-container-title:KEM
Author:
Dai Qian1,
Zhang Xiong2,
Wu Zi Li2,
Zeng Xiang Hua3
Affiliation:
1. Jinling Institute of Technology
2. Southeast University
3. Yangzhou University
Abstract
The performance of non-polar AlGaN-based ultraviolet light-emitting diode (LED) with completely lattice-matched AlInGaN quantum barriers along the [1-100] m-direction were firstly proposed and intensively studied. The simulation results indicated that the internal quantum efficiency (IQE) of the non-polar AlGaN-based LED could be enhanced by 9.7% at an injection current of 350 mA with the introduction of AlInGaN barriers. Compared with the nonpolar AlGaN-based LED with conventional AlGaN quantum barriers, not only the Shockley–Read–Hall recombination rate for the nonpolar AlGaN-based LED with quaternary barriers was remarkably reduced, but also the radiative recombination rate was significantly improved. The enhanced performance for the nonpolar AlGaN-based LED with AlInGaN barriers could be interpreted as the result that the density of dislocations in active region was decreased due to the reduced in-plane strain in the AlGaN/AlInGaN MQWs.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
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