Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors-Reference-Cited by-同舟云学术

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Author:

Yang Yuhui¹,Wang Wenliang¹²³,Zheng Yulin¹,You Jiawen²,Huang Siyu¹,Wu Kefeng¹,Kong Deqi¹,Luo Zhengtang²,Chen Hong⁴,Li Guoqiang¹³^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

2. Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong

3. Guangdong Choicore Optoelectronics Co. Ltd., Heyuan 517003, China

4. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Funder

Key Area Research and Development Project of Guangdong Provice

National Natural Science Foundation of China

Guangzhou Basic and Applied Basic Research Project

National Key Research and Development Project

Joint Fund of the Ministry of Education for Equipment Pre-research

Xiangjiang Scholar Program

Young Elite Scientist Program by CAST

Fundamental Research Funds for the Central Universities

Distinguished Youth Foundation of Guangdong Scientific Committee

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference36 articles.

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