Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1644054
Reference10 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates
3. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
5. Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
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