Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs

Published:2017-11-08 Issue:2 Volume:215 Page:1700368
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ge Mei¹,Cai Qing¹,Zhang Baohua²,Chen Dunjun¹,Hu Liqun¹,Xue Junjun³,Lu Hai¹,Zhang Rong¹,Zheng Youdou¹

Affiliation:

1. The Key Laboratory of Advanced Photonic and Electronic Materials; School of Electronic Science and Engineering; Nanjing University; Nanjing 210093 China

2. Department of Physics; Changji College; Changji 831100 China

3. School of Electronic Science and Engineering; Nanjign University of Posts and Telecommunications; Nanjing 210023 China

Funder

National Key R&D Program of China

Scientific Research Foundation of Graduate School of Nanjing University

Key project of Jiangsu Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

2. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

4. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

5. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

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