Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy-Reference-Cited by-同舟云学术

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Published:2016-09-26 Issue:4 Volume:214 Page:1600363
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Demir İlkay¹²,Robin Yoann¹,McClintock Ryan¹,Elagoz Sezai²,Zekentes Konstantinos¹³,Razeghi Manijeh¹

Affiliation:

1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science; Northwestern University; Evanston IL 60208-0893 USA

2. Department of Nanotechnology Engineering; Cumhuriyet University; 58140 Sivas Turkey

3. Foundation for Research & Technology-Hellas (FORTH); IESL; 1527 Heraklion Greece

Funder

Scientific and Technological Research Council of Turkey (TUBITAK)

Fulbright Organization

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire

2. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

3. InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

4. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

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