InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3427438
Reference22 articles.
1. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
2. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
3. Growth and laser characterization of mixed Nd:LuxGd1−xVO4 laser crystals
4. Structural characterization of GaN laterally overgrown on a (111)Si substrate
5. Epitaxial lateral overgrowth of GaN on Si (111)
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