Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering-Reference-Cited by-同舟云学术

Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

Published:2019-12-23 Issue:7 Volume:217 Page:1900818
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Patwal Shashank¹^ORCID,Agrawal Manvi¹²,Radhakrishnan K.¹²,Seah Tian Long Alex²,Dharmarasu Nethaji²^ORCID

Affiliation:

1. Centre for Micro-/Nano-electronics (NOVITAS)School of Electrical and Electronic EngineeringNanyang Technological University Singapore 639798 Singapore

2. Temasek Laboratories @NTUNanyang Technological University Singapore 637553 Singapore

Funder

Ministry of Education - Singapore

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900818

Reference23 articles.

1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

2. 12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

3. Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy

4. M.Kuball J. W.Pomeroy R.Simms G. J.Riedel H.Ji A.Sarua M. J.Uren T.Martin in Proc. 2007 IEEE Compound Semiconductor Integrated Circuits Symp. Portland 2007 https://doi.org/10.1109/CSICS07.2007.32.

5. The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

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1. Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates;Applied Physics Letters;2024-04-08

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3. Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures;Journal of Applied Physics;2023-10-18

4. AlN/AlGaN/AlN quantum well channel HEMTs;Applied Physics Letters;2023-05-29

5. Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures;APL Materials;2022-11-01