12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation-Reference-Cited by-同舟云学术

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12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Published:2009-06-05 Issue: Volume:2 Page:061001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hoshi Shinichi,Itoh Masanori,Marui Toshiharu,Okita Hideyuki,Morino Yoshiaki,Tamai Isao,Toda Fumihiko,Seki Shohei,Egawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=6/a=061001/pdf

Reference17 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier

3. High-power AlGaN/GaN HEMTs for Ka-band applications

4. A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

5. GaN growth on 150-mm-diameter (111) Si substrates

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts;IEEE Transactions on Electron Devices;2024-09

2. Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method;Crystal Growth & Design;2024-05-13

3. Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors;Materials Science in Semiconductor Processing;2024-03

4. Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors;Applied Physics Letters;2023-11-13

5. RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks;Applied Physics Letters;2023-07-24

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