Thermal Properties and Reliability of GaN Microelectronics: Sub-Micron Spatial and Nanosecond Time Resolution Thermography-Reference-Cited by-同舟云学术

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Thermal Properties and Reliability of GaN Microelectronics: Sub-Micron Spatial and Nanosecond Time Resolution Thermography

Published:2007-10 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE Compound Semiconductor Integrated Circuits Symposium
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Author:

Kuball Martin,Pomeroy James W.,Simms Richard,Riedel Gernot J.,Ji Hangfeng,Sarua Andrei,Uren Michael J.,Martin Trevor

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4384379/4384380/04384412.pdf?arnumber=4384412

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Circuit Proposal of a Latching Current Limiter for Space Applications Based on a SiC N-MOSFET;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-10

2. Optical Fiber Pyrometer Designs for Temperature Measurements Depending on Object Size;Sensors;2021-01-19

3. Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering;physica status solidi (a);2019-12-23

4. Structural stability and electronic properties of the (0 0 0 1) inversion domain boundary in III-nitrides;Computational Materials Science;2018-11

5. Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs;Microelectronics Reliability;2013-06

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