Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition
Author:
Affiliation:
1. Center for Compound Semiconductors and School of Electrical and Computer Engineering; Georgia Institute of Technology; Atlanta Georgia 30332 USA
2. Department of Physics; Arizona State University; Tempe Arizona 85287 USA
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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5. Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs
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1. High-quality AlN growth on flat sapphire at relatively low temperature by crystal island shape control method;Applied Surface Science;2022-12
2. Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition;physica status solidi (b);2022-09-04
3. Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy;Scientific Reports;2022-05-10
4. Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition;Journal of Vacuum Science & Technology A;2022-05
5. Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate;Crystals;2021-12-27
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