Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition

Published:2022-09-04 Issue:1 Volume:260 Page:2200279
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Zhang Li¹^ORCID,Li Junshuai²,Deng Xuguang¹,Xu Kun¹,Zhou Xin¹³,Zhang Xuan¹,Ma Yongjian¹⁴,Yang Feng¹,Fan Yaming¹,Zhang Baoshun¹

Affiliation:

1. Nanofabrication Facility Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China

2. School of Engineering Westlake University Hangzhou 310000 China

3. School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China

4. School of Nano Science and Technology Institute University of Science and Technology of China Hefei 230026 China

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200279

Reference40 articles.

1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

2. All AlGaN epitaxial structure solar-blind avalanche photodiodes with high efficiency and high gain

3. Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes

4. Competitive growth mechanisms of AlN on Si (111) by MOVPE

5. Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

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