3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices-Reference-Cited by-同舟云学术

3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices

Published:2018-12-21 Issue:4 Volume:256 Page:1800477
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Hartmann Jana¹^ORCID,Manglano Clavero Irene¹,Nicolai Lars²,Margenfeld Christoph¹,Spende Hendrik¹,Ledig Johannes³,Zhou Hao¹,Steib Frederik¹,Jaros Angelina¹,Avramescu Adrian⁴,Strassburg Martin⁴,Trampert Achim²,Wehmann Hergo‐Heinrich¹,Lugauer Hans‐Jürgen⁴,Voss Tobias¹,Waag Andreas¹

Affiliation:

1. Institut für Halbleitertechnik and Laboratory for Emerging Nanometrology, Technische Universität BraunschweigHans‐Sommer‐Str. 6638106 BraunschweigGermany

2. Paul‐Drude‐Institut für FestkörperelektronikHausvogteiplatz 5‐710117 BerlinGermany

3. Physikalisch‐Technische Bundesanstalt (PTB)Bundesallee 10038116 BraunschweigGermany

4. OSRAM Opto Semiconductors GmbHLeibnizstraße 493055 RegensburgGermany

Funder

China Scholarship Council

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800477

Reference42 articles.