2″-4″ diameter GaN-on-sapphire substrates free of wafer bow at all temperatures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Counterbalancing effects of bowing in gallium nitride templates by epitaxial growth on pre-strained sapphire substrates;Ceramics International;2024-09
2. Status of h-BN quasi-bulk crystals and high efficiency neutron detectors;Journal of Applied Physics;2024-05-02
3. Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers;physica status solidi (b);2024-03-04
4. Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing;Journal of Crystal Growth;2019-04
5. 3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices;physica status solidi (b);2018-12-21
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