Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing-Reference-Cited by-同舟云学术

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Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing

Published:2019-04 Issue: Volume:512 Page:131-135
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hayashi Yusuke^ORCID,Tanigawa Kentaro,Uesugi Kenjiro,Shojiki Kanako,Miyake Hideto

Funder

MEXT

MEXT “Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society

JSPS KAKENHI

JST CREST

SICORP

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Fundamental energy gap of GaN from photoluminescence excitation spectra;Monemar;Phys. Rev. B,1974

2. Temperature dependence of band gap change in InN and AlN;Guo;Jpn. J. Appl. Phys.,1994

3. The preparation and properties of aluminum nitride films;Chu;J. Electrochem. Soc.,1975

4. Planar nearly ideal edge-termination technique for GaN devices;Ozbek;IEEE Electr. Dev. Lett.,2011

5. Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates;Martens;IEEE Photon. Technol. Lett.,2014

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1. Evaluation of Optical Window Integrity Under Wall Heat Flux of Scramjet Intake;AIAA Journal;2024-01

2. Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD;Journal of Semiconductors;2021-12-01

3. Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs;Japanese Journal of Applied Physics;2021-12-01

4. Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing;AIP Advances;2021-09-01

5. High‐Performance AlGaN‐Based Solar‐Blind UV Photodetectors for Sensing Applications;physica status solidi (a);2021-07-30

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