Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing-Reference-Cited by-同舟云学术

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Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing

Published:2021-09-01 Issue:9 Volume:11 Page:095012
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Hayashi Yusuke¹^ORCID,Uesugi Kenjiro²^ORCID,Shojiki Kanako³^ORCID,Tohei Tetsuya¹,Sakai Akira¹^ORCID,Miyake Hideto³⁴^ORCID

Affiliation:

1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

2. Strategic Planning Office for Regional Revitalization, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507, Japan

3. Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507, Japan

4. Graduate School of Regional Innovation Studies, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507, Japan

Funder

Japan Society for the Promotion of Science

Collaborative Research in Engineering, Science and Technology Center

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0059723

Reference34 articles.

1. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

2. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

3. Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

4. Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer

5. High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing;Journal of Applied Physics;2022-06-07

2. The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate;Symmetry;2022-03-14

3. Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs;Japanese Journal of Applied Physics;2021-12-01

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