High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire-Reference-Cited by-同舟云学术

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High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Published:2020-11-13 Issue:2 Volume:258 Page:2000352
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Shojiki Kanako¹^ORCID,Uesugi Kenjiro²^ORCID,Kuboya Shigeyuki²,Inamori Takafumi¹,Kawabata Shin¹,Miyake Hideto¹³

Affiliation:

1. Graduate School of Engineering Mie University 1577 Kurimamachiya Tsu Mie 514-8507 Japan

2. Strategic Planning Office for Regional Revitalization Mie University 1577 Kurimamachiya Tsu Mie 514-8507 Japan

3. Graduate School of Regional Innovation Studies Mie University 1577 Kurimamachiya Tsu Mie 514-8507 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000352

Reference52 articles.

1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

2. AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

4. Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

5. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN thickness dependence of GaN/AlN superlattices on face-to-face-annealed sputter-deposited AlN templates;Journal of Applied Physics;2024-08-19

2. Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films;Journal of Alloys and Compounds;2024-08

3. 230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs;Applied Physics Express;2024-04-01

4. Optical activation of implanted lanthanoid ions in aluminum nitride semiconductors by high temperature annealing;Optical Materials Express;2024-01-17

5. High-quality β-(Al_xGa_1−x)₂O₃ thin films on sapphire substrates by face-to-face annealing;CrystEngComm;2024

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