Affiliation:
1. National Institutes for Quantum Science and Technology (QST)
2. Kyoto University
3. Mie University
4. Ion Technology Center Co., Ltd
Abstract
Lanthanoid (Ln)-doped aluminum nitride (AlN) semiconductors are one candidate for optoelectric devices and single photon sources, although their optical properties are less understood. We clarify the room temperature optical properties of Ln ion implanted single crystal AlN semiconductors and their changes upon thermal annealing by up to 1700 °C. Photoluminescence (PL), cathodoluminescence (CL), and time-resolved PL for praseodymium (Pr), europium (Eu), and neodymium (Nd) ion implanted AlN are analyzed. Recovery of implantation induced damages and thermal diffusion of implanted Ln ions by thermal annealing are also investigated. Our systematic studies reveal that there is a trade-off between optical activation of implanted Ln ions due to recovery of implantation damage and deactivation (quenching) due to complex formation and aggregation of Ln ions. The PL intensity of implanted Pr ions increases with increasing annealing temperature in the case of high-dose implantation (above 1020 cm-3), whereas it rather decreases in the case of low-dose implantation (below 4 × 1019 cm-3). However, the PL intensity is significantly reduced after annealing at 1700 °C in both cases, indicating that the quenching factor is dominant in this temperature range.
Funder
Fusion Oriented REsearch for disruptive Science and Technology
Japan Society for the Promotion of Science
Subject
Electronic, Optical and Magnetic Materials