Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template-Reference-Cited by-同舟云学术

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Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

Published:2020-02-10 Issue:6 Volume:116 Page:062101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Uesugi Kenjiro¹^ORCID,Shojiki Kanako²^ORCID,Tezen Yuta¹,Hayashi Yusuke³^ORCID,Miyake Hideto²³^ORCID

Affiliation:

1. Strategic Planning Office for Regional Revitalization, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507, Japan

2. Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507, Japan

3. Graduate School of Regional Innovation Studies, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8507, Japan

Funder

Consortium for GaN Research and Applications

Japan Society for the Promotion of Science

Core Research for Evolutional Science and Technology

Ministry of Education, Culture, Sports, Science and Technology

Strategic International Collaborative Research Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5141825

Reference27 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

4. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

5. Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures

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1. GaN thickness dependence of GaN/AlN superlattices on face-to-face-annealed sputter-deposited AlN templates;Journal of Applied Physics;2024-08-19

2. Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion;Journal of Applied Physics;2024-07-11

3. Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates;physica status solidi (b);2024-04-27

4. Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm;physica status solidi (b);2024-04

5. Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD;Gallium Nitride Materials and Devices XIX;2024-03-08

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