Author:
Uesugi Kenjiro,Hayashi Yusuke,Shojiki Kanako,Miyake Hideto
Abstract
Abstract
Combination of sputter deposition and high-temperature annealing is a promising technique for preparing AlN templates with a low threading dislocation density (TDD) at a lower film thickness compared to those prepared by the conventional metalorganic vapor phase epitaxy. However, cracking of AlN films during annealing is a critical issue. In this study, we controlled the residual stress of the sputter-deposited AlN films by modifying the sputtering conditions. Consequently, the occurrence of cracking was effectively suppressed. By optimizing the fabricating conditions, a TDD of 2.07 × 108 cm−2 was achieved for the AlN template with a thickness of 480 nm.
Funder
Japan Society for the Promotion of Science
Ministry of Education, Culture, Sports, Science and Technology
Strategic International Collaborative Research Program
Core Research for Evolutional Science and Technology
Subject
General Physics and Astronomy,General Engineering
Cited by
61 articles.
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