AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire-Reference-Cited by-同舟云学术

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Published:2018-01-22 Issue:4 Volume:112 Page:041110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Susilo Norman¹,Hagedorn Sylvia²,Jaeger Dominik³,Miyake Hideto⁴^ORCID,Zeimer Ute²,Reich Christoph¹,Neuschulz Bettina¹,Sulmoni Luca¹^ORCID,Guttmann Martin¹,Mehnke Frank¹,Kuhn Christian¹,Wernicke Tim¹,Weyers Markus²,Kneissl Michael¹²

Affiliation:

1. Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

2. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

3. Evatec AG, Hauptstraße 1a, 9477 Trübbach, Switzerland

4. Department of Electrical and Electronic Engineering, Mie University, Mie 514-8507, Japan

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5010265

Reference22 articles.

1. Phototherapy and Photochemotherapy of Skin Diseases

2. Development of 230-270 nm AlGaN-based deep-UV LEDs

3. Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

4. Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

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